DLA - MIL-PRF-19500/642C
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R, JANTX, JANTXV, AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 4 August 2006 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
October 25, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, CASE MOUNT THROUGH HOLE PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N6762 THROUGH 1N6765, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV...
December 8, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, CASE MOUNT THROUGH HOLE PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N6762 THROUGH 1N6765, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV...
March 12, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, CASE MOUNT THROUGH HOLE PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N6762 THROUGH 1N6765, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV and...
June 6, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, CASE MOUNT THROUGH HOLE PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N6762 THROUGH 1N6765, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Four levels of product assurance (JAN, JANTX, JANTXV and...
April 28, 2017
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
A description is not available for this item.
June 22, 2012
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
A description is not available for this item.
August 24, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Three levels of product assurance are provided for each...
MIL-PRF-19500/642C
August 4, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Three levels of product assurance are provided for each...
October 24, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Three levels of product assurance are provided for each...
January 23, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Three levels of product assurance are provided for each...
July 30, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R JANTX, JANTXV, AND JANS
A description is not available for this item.
April 18, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R JANTX, JANTXV, AND JANS
This specification covers the performance requirements for silicon, dual ultrafast, power rectifier diodes in a center-tap configuration. Three levels of product assurance are provided for each...