UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DS/IEC 747-8

EN= Semiconductor devices - Discrete devices - Part 8: Field -effect transistors

inactive
Organization: DS
Publication Date: 1 January 1986
Status: inactive
scope:

The publication gives standards for the following categories of field-effect transistors: Type A: junction-gate type; Ty pe B: insulated-gate depletion type; Type C: insulated-gate enhancement type

Document History

February 10, 1992
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
The publication gives standards for the following categories of field-effect transistors: Type A: junction-gate type; Type B: Insulated-gate depletion type; Type C: insulated-gate enhancement type.
DS/IEC 747-8
January 1, 1986
EN= Semiconductor devices - Discrete devices - Part 8: Field -effect transistors
The publication gives standards for the following categories of field-effect transistors: Type A: junction-gate type; Ty pe B: insulated-gate depletion type; Type C: insulated-gate enhancement type
Advertisement