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DOD - SMD 5962-87676

MICROCIRCUITS, DIGITAL, NMOS, 64K X 4 DRAM, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 4 May 1988
Status: inactive
Page Count: 27
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Access Device type Generic number Circuit function time Refresh 01 MT4067-12 64K × 4 bit DRAM 120 ns 256 cycles (4 ms) 02 MT4067-15 64K × 4 bit DRAM 150 ns 256 cycles (4 ms) 03 MT4067-20 64K × 4 bit DRAM 200 ns 256 cycles (4 ms) 04 MT4067-10 64K × 4 bit DRAM 100 ns 256 cycles (4 ms)

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline V D-6 (18-lead, .960" × .310" × .200"), dual-in-line package X See figure 1 (18-terminal, .505" × .305" × .100"), rectangular chip carrier package

Voltage on any pin relative to VSS - - - - - - - - - - - −1.5 V to +7.0 V Short-circuit output current - - - - - - - - - - - - - - 50 mA Power dissipation (PD) - - - - - - - - - - - - - - - - - 1.0 W Storage temperature range - - - - - - - - - - - - - - - −65°0 to +150°C Lead temperature (soldering, 5 seconds) - - - - - - - - +300°C Thermal resistance (θJC): Case V - - - - - - - - - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Case X - - - - - - - - - - - - - - - - - - - - - - - - 50°C/W Junction temperature (TJ) - - - - - - - - - - - - - - - +150°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Power supply and signal reference (VSS) - - - - - - - - 0.0 V dc High level input voltage (VIH) - - - - - - - - - - - - - 2.4 V dc to 6.5 V dc Low level input voltage (VIL) - - - - - - - - - - - - - −1.0 V dc to +0.8 V dc Case operating temperature (TC) - - - - - - - - - - - - −55°C to +110°C Refresh cycle time - - - - - - - - - - - - - - - - - - - 4.0 ms

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

August 10, 2017
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 64K X 4 DRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 27, 2010
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 64K X 4 DRAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-87676
May 4, 1988
MICROCIRCUITS, DIGITAL, NMOS, 64K X 4 DRAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 13, 1987
MICROCIRCUITS, DIGITAL, NMOS, 64K X 4 DRAM, MONOLITHIC SILICON
A description is not available for this item.

References

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