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DLA - SMD-5962-84143 REV E

MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 6 July 1992
Status: inactive
Page Count: 10
scope:

This drawing, describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883 "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit 01 54ALS21 Dual 4-input positive AND gates

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Out line letter Case outline B F-3 (14-lead, .280" × .200" × .070"), flat package C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 (20-terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc minimum to 7.0 V dc maximum Input voltage range - - - - - - - - - - - - - - - - −1.5 V dc at −18 mA to 7.0 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 12.65 mW 1/ Lead temperature (soldering, 10 seconds) - - - - - - - +300°C Thermal resistance, Junction-to-case(θJC): - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - - 2.0 V dc Maximum low level input voltage (VIL): TC = +25°C - - - - - - - - - - - - - - - - - - - - - 0.8 V dc TC = +125°C - - - - - - - - - - - - - - - - - - - - 0.8 V dc TE = −55°C - - - - - - - - - - - - - - - - - - - - - 0.7 V dc Case operating temperature range (TC) - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

November 3, 2017
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 14, 2005
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
SMD-5962-84143 REV E
July 6, 1992
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
This drawing, describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883 "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 19, 1988
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
March 3, 1988
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
October 1, 1986
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
July 1, 1986
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
May 13, 1985
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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