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DLA - MIL-M-38510/276

MICROCIRCUIT, MEMORY, DIGITAL, 262,144 BIT, CMOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (UVEPROM) MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 12 December 1988
Status: inactive
Page Count: 25
scope:

This specification covers the detail requirements for monolithic silicon CMOS erasable programmable read-only memory microcircuits which employ the ultraviolet light erasing technique. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number.

The device types shall be as follows:

Device type Circuit Access time 01 32,768 8 bit EPROM 250 02 32,768 8 bit EPROM 200

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) X D-10 (28-lead, 1.490" × .610" × .232"), dual-in-line package 1/ Y C-12 (32-terminal, .560" × .458" × .120"), rectangular leadless chip carrier package 1/

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range (VCC) 2/ - - - - - - - - - −2.0 V dc to +6.5 V dc All input or output voltages - - - - - - - - - - −2.0 V dc to VCC +1.0 V dc Program input (VPP) - - - - - - - - - - - - - - −2.0 V dc to +14.0 V dc Operating case temperature range (TC) - - - - - −55°C to +125°C Storage temperature range - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - +260°C Thermal resistance, junction-to-case (OJC) - - - 30°C/W Maximum power dissipation (PD) - - - - - - - - - 170 mW Junction temperature (TJ) 3/- - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - 2.0 V dc Maximum low level input voltage (VIL) - - - - - 0.8 V dc High level program input voltage (VPP) - - - - - 12.5 V dc Case operating temperature range (TC) - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

January 4, 1996
MICROCIRCUIT, MEMORY, DIGITAL, 262,144 BIT, CMOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (UVEPROM) MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/276
December 12, 1988
MICROCIRCUIT, MEMORY, DIGITAL, 262,144 BIT, CMOS, ULTRAVIOLET ERASABLE PROGRAMMABLE READ-ONLY MEMORY (UVEPROM) MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon CMOS erasable programmable read-only memory microcircuits which employ the ultraviolet light erasing technique. Two product...

References

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