DLA - SMD-5962-87777 REV A
MICROCIRCUIT, LINEAR, TRANSISTOR ARRAYS/MATCHED PAIR, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 25 August 1989 |
| Status: | inactive |
| Page Count: | 9 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example:
The device type shall identify the circuit function as follows:
Device type Generic number Circuit function 01 LM194 Transistor supermatch pair
The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline X TO-99 (6-lead can), see figure 1
Collector current - - - - - - - - - - - - - - 20 mA Collector-emitter voltage - - - - - - - - - - 35 V dc Base-emitter current- - - - - - - - - - - - - ±10 mA Maximum power dissipation (PD)- - - - - - - - 500 mW Lead temperature (soldering, 10 seconds)- - - +300°C Storage temperature range - - - - - - - - - - −65°C to +150°C Thermal resistance (θJC) - - - - - - - - - - - 70°C/W Thermal resistance (θJA) - - - - - - - - - - - 230°C/W
Ambient operating temperature range (TA) - - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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