DLA - MIL-S-19500/571A
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, MOS, N-CHANNEL, SILICON TYPES 2N7104, 2N7105, 2N7108, 2N7109, JANTX, JANTXV AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 1 November 1993 |
| Status: | inactive |
| Page Count: | 15 |
scope:
This specification covers the detail requirements for N-channel, field effect transistors. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1 (TO-72).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO) NASA Goddard Space Flight Center, Code 310.A Greenbelt, MD 20771, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
TC = +25°C.
Document History
June 25, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, MOS, N-CHANNEL, SILICON TYPES 2N7104, 2N7105, 2N7108, 2N7109, JANTX, JANTXV AND JANS
A description is not available for this item.
MIL-S-19500/571A
November 1, 1993
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, MOS, N-CHANNEL, SILICON TYPES 2N7104, 2N7105, 2N7108, 2N7109, JANTX, JANTXV AND JANS
This specification covers the detail requirements for N-channel, field effect transistors. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure...
December 7, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, MOS, N-CHANNEL, SILICON TYPES 2N7104, 2N7105, 2N7108, 2N7109, JANTX, JANTXV AND JANS
A description is not available for this item.
May 13, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, MOS, N-CHANNEL, SILICON TYPES 2N7104, 2N7105, 2N7108, 2N7109, JANTX, JANTXV AND JANS
A description is not available for this item.