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DLA - SMD-5962-89815

MICROCIRCUIT, MEMORY, DIGITAL, 2K X 8 REGISTERED UVEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 30 December 1991
Status: inactive
Page Count: 15
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Setup time 01 2K × 8 registered UV EPROM 35 ns 02 2K × 8 registered UV EPROM 25 ns 03 2K × 8 registered UV EPROM 18 ns

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package 2/ L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package 2/ 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package 2/

Supply voltage range (VCC) - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC program voltage - - - - - - - - - - - - - - - - 13.0 V dc Maximum power dissipation 3/ - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - +260°C Thermal resistance, junction-to-case (ΘJC) - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - −55°C to +125°C Endurance- - - - - - - - - - - - - - - - - - - - - 10 cycles/byte, minimum Data retention - - - - - - - - - - - - - - - - - - 10 years, minimum

Supply voltage range (VCC) - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - 2.0 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

April 5, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 REGISTERED UVEPROM, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
August 19, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 REGISTERED UVEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 13, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 REGISTERED UVEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 7, 2001
MICROCIRCUIT, MEMORY, DIGITAL, 2K X 8 REGISTERED UVEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89815
December 30, 1991
MICROCIRCUIT, MEMORY, DIGITAL, 2K X 8 REGISTERED UVEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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