DLA - MIL-PRF-19500/590G
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 25 July 2006 |
| Status: | inactive |
| Page Count: | 27 |
scope:
This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
March 15, 2020
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, DEVICE TYPES 1N6626 THROUGH 1N6631, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS)...
July 12, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as...
July 1, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as...
June 4, 2012
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as...
December 4, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as...
MIL-PRF-19500/590G
July 25, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as...
January 9, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as...
December 30, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery semiconductor rectifier diodes. Four levels of product assurance are provided for each device type as...
April 8, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery semiconductor rectifier diodes. Four levels of product assurance are provided for each device type as...
October 18, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery semiconductor rectifier diodes. Four levels of product assurance are provided for each device type as...
November 3, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
May 6, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, HIGH-VOLTAGE, POWER RECTIFIER 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery semiconductor rectifier diodes. Four levels of product assurance are provided for each device type as...
September 15, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, HIGH-VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631, AND U SUFFIX VERSIONS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, ultrafast recovery semiconductor rectifier diodes. Four levels of product assurance are provided for each device type as...
November 18, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS, JANTX, JANTXV, AND JANS
A description is not available for this item.
April 3, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY , HIGH VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS, JAHTX, JANTXV, AND JANS
This specification covers the detail requirements for a silicon, high voltage, ultra-fast recovery semiconductor rectifier diode, intended for use in modern, switched-mode power converters and motor...