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DLA - SMD-5962-84037 REV F

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 November 1999
Status: inactive
Page Count: 13
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following examples.

For device classes M and Q:

For device class V:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC00 Quad 2-input NAND gate

The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device.

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style A GDFP5-F14 or CDFP6-T14 14 Flat pack B GDFP4-F14 14 Flat pack C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP2-F14 or CDFP3-F14 14 Flat pack 2 CQCC1-N20 or CQCC2-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC)...................................................... −0.5 V dc to +7.0 V dc DC input voltage range (VIN).................................................... −0.5 V dc to VCC +0.5 V dc DC output voltage range (VOUT).................................................. −0.5 V dc to VCC +0.5 V dc Clamp diode current (IIK)....................................................... ±20 mA DC output diode current (IOK) (per pin)......................................... ±25 mA DC VCC or GND current (per pin)................................................. ±50 mA Storage temperature range (TSTG)................................................ −65°C to + 150°C Maximum power dissipation (PD):................................................. 500 mW 4/ Lead temperature (soldering, 10 seconds)........................................ +260°C Thermal resistance, junction-to-case (θJC)................................. See MIL-STD-1835 Junction temperature (TJ)....................................................... +175°C 5/

Supply voltage range (VCC) ..................................................... +2.0 V dc to +6.0 V dc Case operating temperature range (TC) .......................................... −55°C to + 125°C Input rise or fall time tr, tf): VCC = 2.0 V ................................................................... 0 to 1,000 ns VCC = 4.5 V ................................................................... 0 to 500 ns VCC = 6.0 V ................................................................... 0 to 400 ns

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

November 22, 2021
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead...
August 26, 2015
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 17, 2009
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 25, 2002
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
June 21, 2000
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-84037 REV F
November 5, 1999
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 18, 1988
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
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