UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-86081 REV A

MICROCIRCUIT, DIGITAL, NMOS, 4096 X 4 BIT STATIC RAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 29 April 1987
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 2168-55 4096 × 4 static random access memory (55 ns) 02 2168-70 4096 × 4 static random access memory (70 ns) 03 2169-50 4096 × 4 static random access memory (50 ns) 04 2169-70 4096 × 4 static random access memory (70 ns) 05 2168-45 4096 × 4 static random access memory (45 ns) 06 2169-40 4096 × 4 static random access memory (40 ns)

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline R D-8 (20-lead, ¼" × 1-1/16") dual-in-line package X (See figure 1) (20-terminal, .430" × .295"), rectangular chip carrier package

Supply voltage range - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Storage temperature range- - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 2/- - - - - - - - 1.2 W Lead temperature (soldering, 10 seconds) - - - - +300°C Thermal resistance, junction-to-case (θJC): Case R - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case X - - - - - - - - - - - - - - - - - - - - 15°C/W Junction temperature (TJ)- - - - - - - - - - - - +175°C DC output current- - - - - - - - - - - - - - - - 20 mA All signal voltages with respect to GND- - - - - −3.5 V dc to +7.0 V dc

Supply voltage (VCC) - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high-level input voltage (VIH) - - - - - 2.2 V dc Maximum low-level input voltage (VIL)- - - - - - 0.8 V dc Case operating temperature range (TC)- - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 29, 2017
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (4096 X 4- BIT) STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 19, 2010
MICROCIRCUIT, MEMORY, DIGITAL, NMOS 16K (4096 X 4- BIT) STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 26, 1996
MICROCIRCUIT, DIGITAL, NMOS, 4096 X 4 BIT STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-86081 REV A
April 29, 1987
MICROCIRCUIT, DIGITAL, NMOS, 4096 X 4 BIT STATIC RAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 27, 1986
MICROCIRCUIT, DIGITAL, NMOS, 4096 X 4 BIT STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.

References

Advertisement