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NPFC - MIL-M-38510/385

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 4 January 1988
Status: active
Page Count: 50
scope:

This specification covers the detail requirements for monolithic silicon, advanced low-power Schottky TTL, bus transceivers with three-state outputs. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuit 01 Octal bus transceivers with three-state outputs 02 Octal bus transceivers with open-collector outputs 03 Octal bus transceivers with open-collector outputs 04 Octal bus transceivers with three-state outputs 05 Octal bus transceivers with three-state outputs 06 Quadruple bus transceivers with three-state outputs 07 Quadruple bus transceivers with three-state outputs

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat-package R D-8 (20-lead, ¼" × 1 1/16"), dual-in-line package S F-9 (20-lead, ¼" × ½"), flat package X C-2A (20-terminal, .350" × .350"), square chip carrier package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - -0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - -15 V dc at -18 mA to +5 5 V dc Storage temperature range - - - - - - - - - - - - -65°C to +150°C Maximum power dissipation per device (PD): 1/ Device type 01 - - - - - - - - - - - - -- - - - 264 mA Device type 02 - - - - - - - - - - - - - - - - - 247.5 mA Device type 03 - - - - - - - - - - - - - - - - - 154 mA Device type 04 - - - - - - - - - - - - - - - - - 291.5 mA Device type 05 - - - -- - - - - - - - - - - - - 346.5 mA Device type 06 and 07 - - - - - - - - - - -- -- 176 mA

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441-5700, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Lead temperature (soldering, 10-seconds)- +300°C Thermal resistance, junction-to-case (θJC): Cases C, D, R, S, X, and 2- - - - - - - (See MIL-M-38510, appendix C) Junction temperature (TJ) 2/ - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - 2.0 V dc Maximum low level input voltage (VIL) - - 0.8 V dc Normalized fanout (each output) 3/ - - - 20 maximum Case operating temperature range (TC) - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar, Advanced Low-Power Schottky TTL, Bus Transceivers with Three-State Outputs, Monolithic Silicon
A description is not available for this item.
July 31, 2012
Microcircuits, Digital, Bipolar, Advanced Low-Power Schottky TTL, Bus Transceivers with Three-State Outputs, Monolithic Silicon
A description is not available for this item.
October 9, 2007
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
October 23, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
November 7, 1996
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
October 29, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/385
January 4, 1988
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, advanced low-power Schottky TTL, bus transceivers with three-state outputs. Two product assurance classes and a choice of...
February 16, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, BUS TRANSCEIVERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
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