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DLA - SMD-5962-89690

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 October 1989
Status: inactive
Page Count: 16
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1. of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.6 2K × 8 CMOS SRAM 25 ns 02 See 6.6 2K × 8 CMOS SRAM 20 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline J D-3 (24-lead, 1.290" × .610" × .225"), dual-in-line package K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package Y Figure 1 (24-terminal, .308 × .408 × .078"), rectangular chip carrier package Z C-11 (28-terminal, .560" × .358" × .120"), rectangular chip carrier package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to 7 V dc Input voltage range 2/- - - - - - - - - - - - - - - 0.5 V to VCC + 0.5 V Output voltage range in high impedance state - - - - −0.5 V dc to 7 V dc Output current - - - - - - - - - - - - - - - - - - - 20 mA Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Power dissipation (PD) - - - - - - - - - - - - - - - 864 mW Lead temperature (soldering, 10 seconds) - - - - - - +275°C Junction temperature (TJ)- - - - - - - - - - - - - - +175°C Thermal resistance, junction-to-case (θJC): Cases J, K, L, X, Z, and 3 - - - - - - - - - - - - See MIL-M-38510, appendix C Case Y - - - - - - - - - - - - - - - - - - - - - - 20°C/W

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum High level input voltage range (VIH) - - - - - - - - 2.2 V dc minimum to VCC + 0.5 V dc maximum Low level input voltage range (VIL) 3/ - - - - - - - −0.5 V dc minimum to 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 11, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
June 10, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 26, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
SMD-5962-89690
October 16, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 STATIC RAM (SRAM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1. of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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