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DLA - SMD-5962-95668

MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 7 September 1995
Status: inactive
Page Count: 12
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance with MIL-PRF-38534. Two product assurance classes, military high reliability (device class H) and space application (device class K) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 MSK 1259B Operational amplifier

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation H or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X See figure 1 8 Flange package

The lead finish shall be as specified in MIL-PRF-38534 for classes H and K. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltages (V±) ............................. ±18 V dc Differential input voltage ....................... ±6.0 V dc Voltage at either input terminal ................. V+ to V− Peak output current (10% duty cycle) ............. 100 mA Maximum power dissipation (PD) 2/ ................ 1.9 W Storage temperature range ........................ −65°C to +150°C Lead temperature (soldering, 10 seconds) ......... +300°C Thermal resistance, junction-to-case (ΘJC) ....... 21°C/W Thermal resistance, junction-to-ambient (ΘJA) .... 30°C/W Junction temperature (TJ) ........................ +175°C

Positive supply voltage (V+) ............... +4.5 V dc to +15.5 V dc Negative supply voltage (V−) ............... −4.5 V dc to −15.5 V dc Case operating temperature range (TC) ...... −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

May 19, 2020
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the...
March 18, 2015
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
April 10, 2007
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or...
April 27, 2001
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-95668
September 7, 1995
MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). This drawing describes device requirements for monolithic microcircuits to be processed in accordance...
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