DLA - SMD-5962-94704 REV B
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 512 X 18 X 2 CLOCKED FIFO, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 18 May 2001 |
| Status: | inactive |
| Page Count: | 24 |
Document History
August 12, 2014
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 512 X 18 X 2 CLOCKED FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
April 24, 2006
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 512 X 18 X 2 CLOCKED FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-94704 REV B
May 18, 2001
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 512 X 18 X 2 CLOCKED FIFO, MONOLITHIC SILICON
A description is not available for this item.
April 9, 1996
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 512 X 18 X 2 CLOCKED FIFO, MONOLITHIC SILICON
A description is not available for this item.
March 8, 1995
MICROCIRCUIT, MEMORY, DIGITAL, BICMOS, 512 X 18 X 2 CLOCKED FIFO, MONOLITHIC SILICON
A description is not available for this item.