NPFC - MIL-PRF-19500/543
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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| Organization: | NPFC |
| Publication Date: | 5 August 1997 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. See 6.5 for JANHC and JANKC ordering information.
See FIGURE 1. (TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768 and 2N6770 (formerly TO-3)), see figures 2 and 3 for JANHC and JANKC (die) dimensions.
(TA = +25°C, unless otherwise specified). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appealing at the end of this document or by letter.
Document History
March 8, 2021
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON REPETITIVE AVALANCHE, ENCAPSULATED (THROUGH-HOLE PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6764, 2N6766, 2N6768, 2N6770, AND JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided...
March 30, 2016
TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON REPETITIVE AVALANCHE, ENCAPSULATED (THROUGH-HOLE PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 2N6764, 2N6766, 2N6768, 2N6770, AND JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for...
September 13, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
March 29, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
September 22, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
May 17, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
May 9, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
December 5, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
April 18, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
May 19, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
August 6, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANXV, JANS, JANHC AND JANKC
A description is not available for this item.
September 7, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC and JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
September 22, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
October 12, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
MIL-PRF-19500/543
August 5, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in power switching applications. Four levels of product assurance are...
November 17, 1993
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770 JANTX, JANTXV, JANS AND JANC
A description is not available for this item.
June 30, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV, JANS, AND JANC
This specification covers the detail requirements for N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product...
May 31, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 8, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT RRANSISTOR, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768, 2N6770, JANTX, JANTXV, AND JANS
A description is not available for this item.
March 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768 AND 2N6770 JANTX, JANTXV, AND JANS
A description is not available for this item.
June 15, 1981
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6764, 2N6766, 2N6768 AND 2N6770 JAN, JANTX AND JANTXV
A description is not available for this item.
August 1, 1980
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6764 AND 2N6768 JAN, JANTX AND JANTXV
A description is not available for this item.