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DLA - SMD-5962-90555

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 12 August 1992
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function tPD 01 Asynchronous PLD 35 ns 02 Asynchronous PLD 25 ns 03 Asynchronous PLD 20 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style K GDFP2-F24 or CDFP3-F24 24 Fiat pack L GDIP3-T24 or CDIP4-T24 24 Dual-in-line 3, X CQCC1-N28 28 Square leadless chip carrier

Supply voltage to ground potential - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc Maximum power dissipation (PD) 3/ - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - +260°C Thermal resistance, junction-to-case (θJC): - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - −55°C to +125°C Output current into outputs (low) - - - - - - - −16 mA

Supply voltage (VCC) - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - 2.0 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 27, 2020
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
December 17, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 22, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
February 21, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90555
August 12, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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