DLA - MIL-S-19500/413B
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3771 AND 2N3772, JANTX, AND JANTXV
| Organization: | DLA |
| Publication Date: | 24 March 1993 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This specification covers the detail requirements for NPN silicon, high-power transistors for use in high-speed power-switching applications. Two levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1 (TO-3).
RΘJC = 1.17°C/W, RΘJA = 29.2°C/W.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771 by using the self-addressed Standardization Document Proposal (DD Form 1426) appearing at the end of this document or by letter.
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