NPFC - MIL-S-19500/565
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897 AND 2N6898 JANTX, JANPXV AND JANS
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| Organization: | NPFC |
| Publication Date: | 24 January 1986 |
| Status: | inactive |
| Page Count: | 28 |
Document History
July 28, 2023
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided...
May 31, 2018
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each...
May 16, 2017
Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6895, 2N6896, 2N6897, AND 2N6898, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
August 10, 2012
Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6895, 2N6896, 2N6897, AND 2N6898, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
November 1, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
June 30, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
December 10, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897, AND 2N6898, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for P-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as...
June 7, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
May 21, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6895,2N6896,2N6897, AND 2N6898 JAN, JANTX, JANTW AND JANS
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as...
July 2, 1991
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JAN, JANTX, JANTW AND JANS
A description is not available for this item.
May 12, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JAN, JANTX, JANTW AND JANS
A description is not available for this item.
October 7, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897 AND 2N6898 JANTX, JANPXV AND JANS
This specification covers the detail requirements for a P-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
MIL-S-19500/565
January 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6895, 2N6896, 2N6897 AND 2N6898 JANTX, JANPXV AND JANS
A description is not available for this item.