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DLA - SMD-5962-89560

MICROCIRCUITS, MEMORY, DIGITAL, NMOS 64K X 4 MULTIPORT VIDEO RAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 12 December 1989
Status: inactive
Page Count: 33
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 SMJ4461 64K × 4 bit multiport video ram

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X D-11 (24-lead, 1.250" × .410" × .225"), dual-in-line package

Voltage range for any pin except VDD and data out - - - - - - - - - - - - −1.0 to 7 V dc Voltage range for VDD supply with respect to VSS- - - - - - - - - - - - - −1.0 to 7 V dc Voltage range for data out with respect to VSS - - - - - - - - - - - - - −1.0 to VDD + 0.3 V dc Short circuit output current per output - - - - - - - - - - - - - - - - - 50 mA Continuous total dissipation (PD)2/- - - - - - - - - - - 1 W Storage temperature range - - - - - - - - - - - - - - - - - - - - - - - - −65°C to +150°C Thermal resistance, Junction-to-case (θJC)- - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - - - - - - +150°C Lead temperature 1.6 mm (1/16 inch) from case for - - - - - - - - - - - - +300°C 60 seconds

Supply voltage range (VDD) - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Supply voltage (VSS) - - - - - - - - - - - - - - - - - - - 0 V dc High level input voltage (VIH) 3/- - - - - - - - - - - - - 2.4 V dc to 5.5 V dc SC high level input voltage (VIH) - - - - - - - - - - - - 2.6 V dc to 5.5 V dc Low level input voltage (VIL) 4/ - - - - - - - - - - - - - −1 to 0.8 V dc System transition times (rise and fall)- - - - - - - - - - 3 ns minimum to 50 ns maximum Case operating temperature (Tc) - - - - - - - - - - - - - −55°C to +110°C maximum Refresh cycle time (trf(MA)) - - - - - - - - - - - - - - - 4.0 ms maximum

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 18, 2018
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 64K X 4 MULTIPORT VIDEO RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 31, 2011
MICROCIRCUITS, MEMORY, DIGITAL, NMOS, 64K X 4 MULTIPORT VIDEO RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89560
December 12, 1989
MICROCIRCUITS, MEMORY, DIGITAL, NMOS 64K X 4 MULTIPORT VIDEO RAM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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