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DLA - MIL-PRF-19500/739

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F

inactive
Organization: DLA
Publication Date: 24 January 2006
Status: inactive
Page Count: 22
scope:

This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects(SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).

intended Use:

The notes specified in MIL-PRF-19500 are applicable to this specification.

Document History

SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
A description is not available for this item.
May 8, 2018
Semiconductor Device, Field Effect Radiation Hardened Quad Transistor, N-Channel and P-Channel, Silicon, Types 2N7518 and 2N7518U, JANTXVR, F, and JANSR, F
A description is not available for this item.
July 1, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided...
MIL-PRF-19500/739
January 24, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects(SEE)), power transistor. Two...

References

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