DLA - MIL-PRF-19500/739
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
| Organization: | DLA |
| Publication Date: | 24 January 2006 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This specification covers the performance requirements for quad N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects(SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
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