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DLA - SMD-5962-95520

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2500 GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 8 August 1995
Status: inactive
Page Count: 18
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Bin Speed 01 1425A 2500 gate, field programmable gate array 82.3 ns 02 1425A-1 2500 gate, field programmable gate array 70 ns

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CMGA5 - PN 133 Pin grid array Y See figure 1 132 Flat pack

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

DC Supply voltage range (VDO) - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range (VI) - - - - - - - - - - - - - - - - −0.5 V dc to VDO + 0.5 V dc Output voltage range (VO) - - - - - - - - - - - - - - - - −0.5 V dc to VDO + 0.5 V dc I/O Source/Sink current (IIO) - - - - - - - - - - - - - - ±20 mA Storage temperature range (TSIG) - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering 10 seconds) - - - - - - - - - 300°C Thermal resistance, junction-to-case (ΘJC): Case X - - - - - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Case Y - - - - - - - - - - - - - - - - - - - - - - - - 11°C/W 2/ Maximum junction temperature (TJ) - - - - - - - - - - - - +175°C

Supply voltage (VDO) - - - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Case operating temperature range (TC) - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and Logistics purposes. TABLE IIB. Delta limits... View More

Document History

August 14, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2500 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
June 10, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2500 GATES, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 2, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2500 GATES, MONOLITHIC SILICON
A description is not available for this item.
April 5, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2500 GATES, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-95520
August 8, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 2500 GATES, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
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