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NPFC - MIL-M-38510/310

MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 18 November 1987
Status: inactive
Page Count: 23
scope:

This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuit 01 Triple, 3-input AND gate 02 Triple, 3-input AND gate (open collector output) 03 Dual, 4-input AND gate 04 Quad, 2-input AND gate 05 Quad, 2-input AND gate (open collector output)

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package X C-2A (20-terminal, .350" × .350"), square chip carrier 2 C-2 (20-terminal, .350" × .350"), square chip carrier

Supply voltage range - - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - - −1.5 V at −18 mA to +5.5 V Storage temperature range - - - - - - - - - −65° to +150°C Maximum power dissipation, (PD) 1/: Device types 01 and 02 - - - - - - - - - 36 mW Device type 03 - - - - - - - - - - - - - 24.2 mW Device types 04 and 05 - - - - - - - - - 48.4 mW Lead temperature (soldering, 10 seconds) - 300°C Thermal resistance, junction to case (θJC): Cases A, B, C, D, X and 2 - - - - - - - - (See MIL-M-38510, appendix C) Junction temperature (TJ) - - - - - - - - - 175° C 2/

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage (VCC) - - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high level input voltage (VIH)- - - 2.0 V Maximum low level input voltage (VIL) - - - 0.7 V Case operating temperature range (TC) - - - −55° to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar Low-Power Schottky TTL, and Gates Monolithic Silicon
A description is not available for this item.
July 31, 2012
Microcircuits, Digital, Bipolar Low-Power Schottly TTL, and Gates Monolithic Silicon
A description is not available for this item.
October 9, 2007
Microcircuits, Digital, Bipolar Low-Power Schottly TTL, and Gates Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines...
October 3, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines...
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
May 2, 1994
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
December 9, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/310
November 18, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, low-power Schottky TTL, positive AND logic gate microcircuits. Two product assurance classes and a choice of case outlines...
November 5, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
October 17, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
August 9, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
April 29, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
April 28, 1982
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
November 27, 1979
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
January 3, 1979
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
August 9, 1977
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
April 1, 1977
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
November 11, 1976
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
June 17, 1976
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
February 13, 1976
MICROCIRCUITS, DIGITAL, BIPOLAR LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
A description is not available for this item.
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