UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-88594 REV B

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RAM (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 10 October 1991
Status: inactive
Page Count: 17
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The Complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.6) 256 × 4 CMOS static RAM 15 ns 02 (See 6.6) 256 × 4 CMOS static RAM 35 ns 03 (See 6.6) 256 × 4 CMOS static RAM 25 ns

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package W D-7 (22-lead, 1.111" ×.410" × .225"), dual-in-line package X C-3 (24-terminal, .410" × .410" × .100"), square chip carrier package

Supply voltage to ground potential - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs- - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC input voltage - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Output current into outputs (low)- - - - - - - - - - 20 mA Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/ - - - - - - - - - 495. mW 1/ Lead temperature .(soldering, 10 seconds) - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases W, X, and K - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - +175°C Latchup current- - - - - - - - - - - - - - - - - - - >200 mA

Supply voltage (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH) - - - - 2.1 V dc Maximum low level input voltage (VIL)- - - - - 0.8 V dc Case operating temperature range (TC)- - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 25, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RAM (SRAM), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
July 6, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RAM (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 14, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RAM (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88594 REV B
October 10, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RAM (SRAM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 23, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RAM (SRAM), MONOLITHIC SILICON
A description is not available for this item.
July 27, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 4 STATIC RAM (SRAM), MONOLITHIC SILICON
A description is not available for this item.

References

Advertisement