Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching
|Publication Date:||10 May 1998|
|ICS Code (Semiconducting materials):||29.045|
1.1 This test method describes a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening.
1.2 The principal application of this test method is for determining the depth of damage of the non-polished back surface that has had intentionally added work damage.
1.3 The measurement is destructive since a specimen is prepared from a section of a silicon wafer.
1.4 Depth of damage can be measured in the range of 5.0 to 200 µm using this method.
1.5 This test method is intended for use in process control where each individual location is resposible to determine the internal repeatability to its satisfaction.
1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.