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DLA - SMD-5962-89863

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 September 1990
Status: inactive
Page Count: 22
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.6 512 × 9 FIFO 80 ns 02 See 6.6 512 × 9 FIFO 65 ns 03 See 6.6 512 × 9 FIFO 50 ns 04 See 6.6 512 × 9 FIFO 40 ns 05 See 6.6 512 × 9 FIFO 30 ns 06 See 6.6 512 × 9 FIFO 25 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X D-10 (28-lead, 1.490" × .610" × .232"), dual-in-line package Y D-15 (28-lead, 1.485" × .310" × .230"), dual-in-line package Z C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package U F-11 (28-lead, .740" × .380" × .090"), flat package

Supply voltage to ground potential - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - 20 mA Maximum power dissipation 1/ - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - +260°C Thermal resistance, junction-to-case (θJC): - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/ - - - - - - - - - +150°C Storage temperature range - - - - - - - - - - - −65°C to +15O°C Temperature under bias - - - - - - - - - - - - - −55°C to +125°C

Supply voltage (VCC) - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - 2.2 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

September 7, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
April 20, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 8, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89863
September 17, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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