DLA - SMD-5962-95724 REV B
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 1 September 2000 |
| Status: | inactive |
| Page Count: | 23 |
Document History
February 16, 2022
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are...
May 8, 2014
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available...
SMD-5962-95724 REV B
September 1, 2000
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
June 12, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535...
September 14, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...