NPFC - MIL-S-19500/620
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 AND 1N5822US JANTX, JANTXV AND JANC
| Organization: | NPFC |
| Publication Date: | 22 April 1993 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This specification covers the detail requirements for silicon, Schottky barrier rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figures 1, 2, and 3 (JANC die) dimensions.
Primary electrical characteristics at TA = +25°C unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-EC, 1507 Wilmington Pike, Dayton, OH 45444-5270, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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