scope:

This Technical Specification defines procedures to test and evaluate the durability of crystalline silicon photovoltaic modules to the effects of short-term high voltage stress including potential-induced degradation (PID) and polarization. Two test methods are defined that do not inherently produce equivalent results. The methods describe how to achieve a constant stress level. The test methods are designed to measure PID sensitivity and will give results according to the stress levels and the module grounding configuration inherent to the respective tests. The stress method (b), contacting the surfaces with a conductive electrode, is given as a screening tool to look for cell sensitivity and some aspects of the component packaging materials (glass bulk resistivity, encapsulant bulk resistivity, especially with respect to ion mobility) and not a comprehensive module test.