NPFC - MIL-PRF-19500/758
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS
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| Organization: | NPFC |
| Publication Date: | 25 March 2015 |
| Status: | inactive |
| Page Count: | 19 |
scope:
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions.
Document History
March 16, 2023
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS
A description is not available for this item.
July 28, 2017
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
MIL-PRF-19500/758
March 25, 2015
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...
June 28, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product...