WSPC - LOW TEMP EPITAX GRWTH SEMI
LOW TEMPERATURE EPITAXIAL GROWTH OF SEMICONDUCTORS
active, Most Current
| Organization: | WSPC |
| Publication Date: | 31 December 1990 |
| Status: | active |
| Page Count: | 352 |
scope:
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Document History
LOW TEMP EPITAX GRWTH SEMI
December 31, 1990
LOW TEMPERATURE EPITAXIAL GROWTH OF SEMICONDUCTORS
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device...