DLA - MIL-S-19500/616
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THRU 1N6659 AND 1N6657R THRU 1N6659R, JANTX, JANTXV, AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 8 March 1994 |
| Status: | inactive |
| Page Count: | 7 |
scope:
This specification covers the detail requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1 (TO-254AA isolated).
(per leg)
Types VRWM IFSM 1/ IF trr RΘJC RΘJA TSTG and TJ
tP = 8.3 ms 1/2/3/ TC = 100°C 1/ 1/ 1/
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Document History
January 30, 2023
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST DUAL, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6657 THROUGH 1N6659 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a silicon, dual (common anode or common cathode), high voltage, ultrafast power rectifier diodes. Four levels of product assurance...
January 28, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST DUAL, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6657 THROUGH 1N6659 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a silicon, dual (common anode or common cathode), high voltage, ultrafast power rectifier diodes. Four levels of product assurance...
February 24, 2017
DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance “JAN, JANTX, JANTXV, and JANS” are provided...
July 16, 2015
DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance "JAN, JANTX, JANTXV, and JANS" are provided...
March 12, 2014
Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6657 through 1N6659 and 1N6657R through 1N6659R, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
April 17, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as...
March 27, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as...
March 12, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as...
April 3, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as...
March 21, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as...
April 16, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as...
December 19, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
October 20, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Four levels of product assurance are provided for each device type as...
MIL-S-19500/616
March 8, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THRU 1N6659 AND 1N6657R THRU 1N6659R, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for a silicon, dual high voltage, ultrafast power rectifier diodes. Three levels of product assurance are provided for each device type as specified...