DLA - SMD-5962-87703
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, 256 X 9-BIT RAM, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 9 November 1987 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example:
The device types shall identify the circuit function as follows:
Device type Generic number Circuit function Access time 01 (See 6.4) 2304-bit bipolar RAM (three-state) 70 ns 02 (See 6.4) 2304-bit bipolar RAM (three-state) 60 ns 03 (See 6.4) 2304-bit bipolar RAM (three-state) 45 ns
The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline W D-7 (22-lead, ⅜" × 1 ⅛"), dual-in-line package
Supply voltage - - - - - - - - - - - - - - - - +7 V dc maximum Input voltage- - - - - - - - - - - - - - - - - +5.5 V dc maximum Storage temperature range- - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - 1.05 W 1/ Lead temperature (soldering, 10 seconds) - - - +300°C Thermal resistance, junction-to-case (θJC) - - (See MIL-M-38510, appendix C) Junction temperature (TJ)- - - - - - - - - - - +200°C
Supply voltage range (VCC) - - - - - - - - - - +4.75 V dc to +5.25 V dc Case operating temperature range (TC)- - - - - −55°C to +125°C Minimum high level input voltage - - - - - - - 2.0 V dc Maximum low level input voltage- - - - - - - - 0.8 V dc
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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