DLA - MIL-S-19500/64C (1)
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N396A
inactive
| Organization: | DLA |
| Publication Date: | 15 December 1962 |
| Status: | inactive |
| Page Count: | 3 |
Document History
June 7, 2021
Semiconductor Device, Transistor, PNP, Germanium, Low Power Type 2N396A
A description is not available for this item.
July 13, 2011
Semiconductor Device, Transistor, PNP, Germanium, Low Power Type 2N396A
A description is not available for this item.
March 26, 2004
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N396A
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N396A
A description is not available for this item.
June 29, 1967
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N396A
This specification covers the detail requirements for a low power, PNP, germanium transistor.
See figure 1 (TO-5).
Maximum ratings.
Primary electrical characteristics.
MIL-S-19500/64C (1)
December 15, 1962
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N396A
A description is not available for this item.
November 15, 1961
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPE 2N396A
A description is not available for this item.