scope:

This specification covers the detail requirements for monolithic silicon, N-channel MOS, 2,048 words/8 bit, 5.0 volt electrically erasable programmable read only memory microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device types shall be as follows:

Device type Circuit organization Access time 01 2048 Words/8 bit 450 ns 02 2048 Words/8 bit 350 ns 03 2048 Words/8 bit 300 ns 04 2048 Words/8 bit 250 ns

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) J D-3 (24-lead, ½" × 1 ¼"), dual-in-line package X C-2 (32-terminal, .455" × .550"), rectangular chip carrier package

Supply voltage range (V_CC)- - - - - - - - - - −1.0 to +7.0 V All inputs/outputs voltage range- - - - - - - −1.0 to +7.0 V Chip erase voltage range (V_OE)- - - - - - - - −.03 to +22.0 V Operating case temperature range- - - - - - - −55°C to +125°C Storage temperature range - - - - - - - - - - −65°C to +150°C Continuous power dissipation- - - - - - - - - 1 Watt Lead temperature (soldering, 10 seconds)- - - +300°C Maximum junction temperature (T_J): 2/ - - - - +175°C Thermal resistance, junction to case (θ_JC) Case J - - - - - - - - - - - - - - - - - - - 18.0°C/W Case X - - - - - - - - - - - - - - - - - - - 5.5°C/W

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, RADC (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Device Min Max Units types Supply voltages: V_CC- - - - - - - - - - - - - - - - - - - - - All 4.5 5.5 V dc V_SS- - - - - - - - - - - - - - - - - - - - - All 0.0 0.0 V dc High level input voltages: (V_IH)- - - - - - - - - - - - - - - - - - - - All 2.0 VCC +1 V dc Low level input voltage: (V_IL)- - - - - - - - - - - - - - - - - - - - All −0.5 0.8 V dc Operating case temperature (T_C)- - - - - - - - All −55 +125 °C High level chip erase voltage: (V_OE on OE)- - - - - - - - - - - - - - - - - All 20 22 V dc

intended Use:

Microcircuits conforming to this specification are intended for use for Government microcircuit applications (original equipment) and logistic purposes.