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DS/EN 62047-16

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

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Organization: DS
Publication Date: 14 July 2015
Status: active
Page Count: 17
ICS Code (Other semiconductor devices): 31.080.99
scope:

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Document History

DS/EN 62047-16
July 14, 2015
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or...
Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films; wafer curvature and cantilever beam deflection methods
This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µm to 10 µm in MEMS by wafer curvature or cantilever beam deflection...
Semiconductor devices - Micro-electromechanical devices -- Part 16: Test methods for determining residual stresses of MEMS films; wafer curvature and cantilever beam deflection methods
This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 µm to 10 µm in MEMS by wafer curvature or cantilever beam deflection...
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