DLA - DESC-DWG-79018 REV A
MICROCIRCUITS, DIGITAL, CMOS, RANDOM ACCESS MEMORY MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 23 July 1979 |
| Status: | inactive |
| Page Count: | 13 |
scope:
This drawing describes the requirements for monolithic silicon, CMOS, 128-word × 8-Bit static random access memory microcircuits. This drawing provides for a level of microcircuit quality and reliability assurance for procurement of microcircuits in accordance with MIL-M-38510.
The complete part number shall be as shown in the following example:
The device type shall identify the circuit function as follows:
Device type Generic number Circuit 01 1823SD Random access memory
The case outline shall be as designated in MIL-M-38510, appendix C and as follows:
Outline letter Case outline J D-3(24-pin, ½″ × 1 ¼″, dual-in-line pack)
Supply voltage range- - - - - - - - - - - - - - - - - −0.5 Vdc to +18 Vdc Input voltage range - - - - - - - - - - - - - - - - - −0.5 to VDD +0.5 Vdc Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation, PD - - - - - - - - - - - - 500 mWdc 1/ Lead temperature (soldering 10 seconds) - - - - - - - +300°C Thermal resistance, junction to case- - - - - - - - - θJC = 0.08°C/mW for dual-in-line Junction temperature- - - - - - - - - - - - - - - - - TJ = +175°C
Supply voltage- - - - - - - - - - - - - - - - - - - - +3.0 Vdc to +15 Vdc Ambient operating temperature range - - - - - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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