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IEEE CMOS MEMORY CIRCUITS - CMOS MEMORY CIRCUITS AND ARCHITECTURES
IEEE
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Nanocrystals in Nonvolatile Memory
September 13, 2018 - CRC

In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile...

Cold Hibernated Elastic Memory Structure: Self-Deployable Technology and Its Applications
November 30, 2018 - CRC

Cold hibernated elastic memory (CHEM) is a smart material technology that uses shape memory polymers in open cellular (foam) structures. CHEM foams are self-deployable and use the foam's elastic recovery plus their shape memory to erect structures. This book describes CHEM...

Shape Memory Materials
May 14, 2018 - CRC

This work addresses the basic principles, synthesis / fabrication and applications of smart materials, specifically shape memory materials. Based on origin, the mechanisms of transformations vary in different shape memory materials and are discussed in different chapters under titles...

SMD 5962-01533 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 32-BIT, 3.3 V, RADIATION-HARDENED SRAM, MULTICHIP MODULE
April 1, 2019 - DOD

This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V), and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in...

SMD 5962-01511 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 32-BIT, RADIATIONHARDENED SRAM, MULTICHIP MODULE
April 1, 2019 - DOD

This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V), and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in...

DS/ISO/IEC TS 19841 - Technical Specification for C++ Extensions for Transactional Memory
November 12, 2018 - DS

ISO/IEC TS 19841:2015 describes extensions to the C++ Programming Language (1.3) that enable the specification of Transactional Memory. These extensions include new syntactic forms and modifications to existing language and library. The International Standard, ISO/IEC 14882, provides...

SMD 5962-99519 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYS REPROGRAMMABLE), 64 MACROCELL, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
March 26, 2019 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

SMD 5962-01515 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 72,000 GATES, MONOLITHIC SILICON
March 22, 2019 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

SMD 5962-89497 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256K X 4 VIDEO RAM, MONOLITHIC SILICON
March 22, 2019 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

ISO DIS 24497-1 - Non-destructive testing - Metal magnetic memory - Part 1: Vocabulary and general requirements
November 6, 2018 - ISO

This document specifies terms and definitions for non-destructive testing by the technique of metal magnetic memory (MMM) as well as general requirements for application of this technique of the magnetic testing method. The terms specified in this document are mandatory for application in...

ISO DIS 24497-2 - Non-destructive testing - Metal magnetic memory - Part 2: Inspection of welded joints
November 6, 2018 - ISO

This document specifies general requirements for the application of the non-destructive metal magnetic memory (MMM) testing technique of the magnetic testing method for quality assurance of welded joints. This document may be applied to welded joints in any type of ferromagnetic products:...

SMD 5962-12204 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 64-MEG, USERCONFIGURABLE, 3.3 VOLT, NOR FLASH MEMORY, MONOLITHIC SILICON
March 1, 2019 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

IEEE 1890 - Error Correction Coding of Flash Memory Using Low-Density Parity Check Codes
September 27, 2018 - IEEE

This draft standard specifies a method to construct two-level low-density parity-check (LDPC) codes and to utilize them as the error correction coding (ECC) scheme in non-volatile memories (NVM). The encoding and decoding methods as well as the implications on memory and overall...

SMD 5962-02501 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-BIT, LOW VOLTAGE (3.3 V) SRAM, MONOLITHIC SILICON
February 21, 2019 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

DS/ETSI EN 303 470 V1.1.1 - Environmental Engineering (EE); Energy Efficiency measurement methodology and metrics for servers
March 18, 2019 - DS

The present document specifies a metric using the Server Efficiency Rating Tool ((SERT™), test conditions and product family configuration for the assessment of energy efficiency of computer servers using reliable, accurate and reproducible measurement methods. The metric applies to general purpose...

SMD 5962-13235 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 512K x 32-BIT (16 M), RADIATION-HARDENED, DUAL VOLTAGE SRAM, MONOLITHIC SILICON
March 1, 2019 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

Hands-On Embedded Programming with C++17
January 31, 2019 - PACKT

"Build safety-critical and memory-safe stand-alone and networked embedded systems Key Features * Know how C++ works and compares to other languages used for embedded development * Create advanced GUIs for embedded devices to design an attractive and functional UI * Integrate proven...

SMD 5962-14230 - MICROCIRCUIT, MEMORY, DIGITAL, RADIATIONHARDENED, CMOS/SOI, 64MBIT NONVOLATILE RANDOM ACCESS MEMORY (NVRAM), MULTICHIP MODULE (MCM)
February 8, 2019 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

C++ Fundamentals
March 15, 2019 - PACKT

"Write high-level abstractions while retaining full control of the hardware, performances, and maintainability. Key Features * Transform your ideas into modern C++ code, with both C++11 and C++17 * Explore best practices for creating high-performance solutions * Understand C++ basics and work with...

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