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IEEE RADIATION AND - RADIATION AND SCATTERING OF WAVES
IEEE
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DODD 6055.08 - Occupational Ionizing Radiation Protection Program
August 31, 2018 - DOD

PURPOSE. This Instruction reissues Department of Defense Instruction (DoDI) 6055.8 (Reference (a)) according to the authority in DoD Directive (DoDD) 5134.01 (Reference (b)) and the guidance in DoDD 4715.1E (Reference (c)) to: a. Implement Occupational Safety and Health Administration (OSHA)...

MIL-PRF-19500/775 - TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7648 QUALITY LEVELS JANTXV AND JANS
December 3, 2018 - NPFC

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Provisions for...

An Introduction to Radiation Protection
November 1, 2018 - CRC
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SMD 5962-15241 - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 32 BIT BUS SWITCH, MONOLITHIC SILICON
December 11, 2018 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

ISO 9060 - Solar energy - Specification and classification of instruments for measuring hemispherical solar and direct solar radiation
November 1, 2018 - ISO

This document establishes a classification and specification of instruments for the measurement of hemispherical solar and direct solar radiation integrated over the spectral range from approximately 0,3 μm to about 3 μm to 4 μm. Instruments for the measurement of hemispherical solar...

Radiation-Thermal Effects and Processes in Inorganic Materials
September 25, 2018 - TTP

This issue of the journal is dedicated to the results of scientific and applied research presented at the XIII International Conference "Radiation-Thermal Effects and Processes in Inorganic Materials" (October 9-14, 2017, Tomsk, Russia). The selected papers cover the actual scientific...

MIL-PRF-19500/684 - TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR
November 23, 2018 - NPFC

This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche...

SMD 5962-87622 - MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 1-OF-8 DECODER/DEMULTIPLEXER, MONOLITHIC SILICON
November 15, 2018 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

SMD 5962-87759 - MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
November 28, 2018 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device classes B, Q, and M) and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available,...

MIL-PRF-19500/673 - TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7468 AND 2N7469 JANTXVR, F, G AND H AND JANSR, F, G AND H
November 27, 2018 - NPFC

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche...

MIL-PRF-19500/661 - TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR
November 23, 2018 - NPFC

This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device, with...

SMD 5962-15225 - MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M x 48- BIT (96M), RADIATION-HARDENED, FLOW-THRU, SYNCHRONOUS SRAM (SSRAM), MONOLITHIC SILICON
November 13, 2018 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

ASTM 12.02 - Nuclear (II), Solar and Geothermal Energy; Radiation Processing
September 1, 2018 - ASTM

Volumes 12.01 and 12.02 feature over 330 nuclear-related standards. Volume 12.02 covers: Nuclear Technology and Applications - standards cover behavior and use of nuclear structural materials, nuclear radiation metrology, and decontamination and decommissioning of nuclear facilities and...

SMD 5962-96813 - MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, HEX INVERTER SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
October 25, 2018 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

DS/EN 513 - Plastics – Poly(vinyl chloride) (PVC) based profiles – Determination of the resistance to artificial weathering
December 18, 2018 - DS

This document specifies a method for exposing specimens made from poly(vinyl chloride) (PVC) based profiles to xenon-arc radiation, in order to assess changes in characteristics. It is applicable to PVC based profiles including those covered with foil, lacquered or coextruded. NOTE - The...

ISO FDIS 24678-7 - Fire safety engineering - Requirements governing algebraic formulae - Part 7: Radiation heat flux received from an open pool fire
November 21, 2018 - ISO

The requirements in this document govern the application of a set of explicit algebraic formulae for the calculation of specific characteristics of radiation heat flux from an open pool fire. This document is an implementation of the general requirements provided in ISO 16730-1 for the case...

SMD 5962-89539 - MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT MULTIPLEXER, MONOLITHIC SILICON
October 24, 2018 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

SMD 5962-87550 - MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
October 24, 2018 - DOD

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of...

MIL-PRF-19500/744 - TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7616, QUALITY LEVELS JANTXV AND JANS
October 23, 2018 - NPFC

This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device...

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