Transistor Standards

1.1 This test method covers the continuous determination of pH of water by electrometric measurement using the glass, the antimony or the ion-selective field-effect transistor (ISFET) electrode as the sensor. 1.2 This test method does not cover measurement of samples with less than 100 μS/cm...

015570-000000-000000 1 Scope 1.1 These requirements apply to semiconductor devices of the isolated-mounting type - thyristors, transistors, diodes, and the like, and hybrid modules consisting of combinations of these devices. 1.2 The term isolation, as used in this standard, refers to the...

1.1 This guide provides illustrations of radiographs of semiconductors and related devices. Low powered transistors (through the TO-11 case configuration), diodes, low-power rectifiers, power devices, and integrated circuits are illustrated with common assembly features. Particular areas of...

Scope. This specification covers the performance requirements for NPN, silicon, power transistor. Three levels of product assurance are provided for each device type (JAN, JANTX, and JANTXV).

Scope. This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon transistors in one package. Four levels of product assurance are provided for each device type as specified in...

Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device....

Scope. This specification covers the performance requirements for NPN, silicon, high-speed switching transistor. Two levels of product assurance (JAN and JANTX) are provided for all encapsulated devices.

Scope. This specification covers the performance requirements for NPN, silicon, switching, medium power transistors. One level of product assurance (JAN) is provided for all encapsulated devices.

Scope. This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum...

Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are...

Scope. This specification covers the performance requirements for N-channel, enhancement mode, MOSFET, power transistors. These transistors are intended for use in high density power switching applications and include ratings for avalanche energy (EAR and EAS) and avalanche current...

Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor.

Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device...

Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are...

Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided...

Scope. This specification covers the performance requirements for PNP silicon, low-power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500, two levels of product assurance are provided for die.

Scope. This specification covers the performance requirements for PNP silicon, switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance (JANHC and JANKC) are provided for each...

Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided...

Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of...

Scope. This specification covers the performance requirements for NPN, silicon, switching transistors in a four independent chip array. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight...