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DOD - SMD 5962-02517

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 128M X 8 bit STACKED DIE(1Gbit) SYNCHRONOUS DRAM (SDRAM), MODULE

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Organization: DOD
Publication Date: 18 January 2018
Status: active
Page Count: 40
scope:

This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment (device class N). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

SMD 5962-02517
January 18, 2018
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 128M X 8 bit STACKED DIE(1Gbit) SYNCHRONOUS DRAM (SDRAM), MODULE
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device class Q), and nontraditional performance environment (device...
June 17, 2011
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 128M X 8 bit STACKED DIE(1Gbit) SYNCHRONOUS DRAM (SDRAM), MODULE
This drawing documents three product assurance class levels consisting of space application (device class V), high reliability (device classes M and Q), and nontraditional performance environment...
April 6, 2004
MICROCIRCUIT MEMORY CMOS, DIGITAL, 128M X 8 BIT STACKED DIE(1GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE
A description is not available for this item.
December 17, 2002
MICROCIRCUIT MEMORY CMOS, DIGITAL, 128M X 8 BIT STACKED DIE(1GBIT) SYNCHRONOUS DRAM (SDRAM), MODULE
A description is not available for this item.

References

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