Semiconductor devices – Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
|Publication Date:||1 April 2010|
|ICS Code (Semiconductor devices):||31.080|
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.