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IEC 62417

Semiconductor devices – Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

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Organization: IEC
Publication Date: 1 April 2010
Status: active
Page Count: 20
ICS Code (Semiconductor devices): 31.080
scope:

This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Document History

IEC 62417
April 1, 2010
Semiconductor devices – Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable...

References

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