JEDEC JESD 22-A117
Electrically Erasable Programmable ROM (EEPROM) Program / Erase Endurance and Data Retention Stress Test
|Publication Date:||1 November 2018|
This standard specifies the procedural requirements for performing valid endurance, retention and crosstemperature tests based on a qualification specification. Endurance and retention qualification specifications (for cycle counts, durations, temperatures, and sample sizes) are specified in JESD47 or may be developed using knowledge-based methods as in JESD94.
The program/erase endurance and data retention test for qualification and monitoring, using the parameter levels specified in JESD47, is considered destructive. The data retention stress may be used as a proxy to replace the high temperature storage life test when the temperature and time meet or exceed qualification requirements. Cross-temperature testing for writing and reading across the data sheet temperature range can be considered when there are demonstrated sensitivities for programming at low and reading at high temperatures or visa-versa. Lesser test parameter levels (e.g., of temperature, number of cycles, retention bake duration) may be used for screening as long as these parameter levels have been verified by the device manufacturer to be nondestructive; this can be performed anywhere from wafer level to finished device.