NPFC - MIL-PRF-19500/659
Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
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| Organization: | NPFC |
| Publication Date: | 26 February 2019 |
| Status: | active |
| Page Count: | 1 |
Document History
MIL-PRF-19500/659
February 26, 2019
Semiconductor Device, Field Effect Radiation Hardened Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
A description is not available for this item.
April 2, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
This specification covers the performance requirements for a P-Channel, radiation hardened, enhancement mode, MOSFET, power transistor. One level of product assurance is provided for each device type...
July 15, 2011
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effect), Transistor, P-Channel Silicon Type 2N7440, and 2N7441 JANSD and JANSR
A description is not available for this item.
June 16, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECT), TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
A description is not available for this item.
August 20, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor....