NPFC - MIL-PRF-19500/689
Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
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| Organization: | NPFC |
| Publication Date: | 26 February 2019 |
| Status: | active |
| Page Count: | 1 |
Document History
MIL-PRF-19500/689
February 26, 2019
Semiconductor Device, Field Effect Radiation Hardened Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
A description is not available for this item.
July 15, 2011
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
A description is not available for this item.
February 15, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R
A description is not available for this item.
February 28, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications....
February 28, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor...