NPFC - MIL-PRF-19500/702
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7482, 2N7483, AND 2N7484, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
active, Most Current
Buy Now
| Organization: | NPFC |
| Publication Date: | 26 April 2019 |
| Status: | active |
| Page Count: | 23 |
scope:
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to four radiation levels ("R", "F", "G" and "H") are provided for JANTXV and JANS product assurance levels.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/702
April 26, 2019
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7482, 2N7483, AND 2N7484, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
June 24, 2016
TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7482, 2N7483, AND 2N7484, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
February 26, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
May 21, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
January 14, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 30, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
January 18, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
May 21, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7482T3, 2N7483T3 AND 2N7484T3 JANTXVR, F, G AND H AND JANSR, F, G AND H
A description is not available for this item.
November 28, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7482T3, 2N7483T3 AND 2N7484T3 JANTXVR, F, G AND H AND JANSR, F, G AND H
This specification covers the performance requirements for an N-Channel, enhancement mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...