DLA - DSCC-DWG-V62/19611
MICROCIRCUIT, LINEAR, 0.3 GHz TO 20 GHz, GaAs, pHEMT, MMIC, LOW NOISE AMPLIFIER, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 28 May 2019 |
| Status: | active |
| Page Count: | 14 |
scope:
Scope.
This drawing documents the general requirements of a high performance 0.3 GHz to 20 GHz, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier microcircuit, with an operating temperature range of -55°C to +105°C.
Document History
DSCC-DWG-V62/19611
May 28, 2019
MICROCIRCUIT, LINEAR, 0.3 GHz TO 20 GHz, GaAs, pHEMT, MMIC, LOW NOISE AMPLIFIER, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance 0.3 GHz to 20 GHz, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave...