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JEDEC JESD 51

Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Device)

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Organization: JEDEC
Publication Date: 1 December 1995
Status: active
Page Count: 8
scope:

This standard and its subsequent addendum's, provides a standard for thermal measurement that, if followed fully, will provide correct and meaningful data that will allow for determination of junction temperature for specific conditions. The data can be used for package design evaluation, device characterization and reliability predictions.

Document History

JEDEC JESD 51
December 1, 1995
Methodology for the Thermal Measurement of Component Packages (Single Semiconductor Device)
This standard and its subsequent addendum's, provides a standard for thermal measurement that, if followed fully, will provide correct and meaningful data that will allow for determination of...

References

This document is referenced by:
JESD51-51A - Implementation Of The Electrical Test Method For The Measurement Of Real Thermal Resistance And Impedance Of Light-Emitting Diodes With Exposed Cooling Surface
Published by JEDEC on October 1, 2022
This document specifies thermal testing procedures for power light-emitting diodes (power LEDs) and/or high brightness light-emitting diodes (HB LEDs) – in the following referred to as LEDs – which...
This document is referenced by:
JEDEC JESD 51-14 - Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path
Published by JEDEC on November 1, 2010
This document specifies a test method (referred to herein as "Transient Dual Interface Measurement") to determine the conductive thermal resistance "Junction-to-Case" RθJC (θJC) of semiconductor...
This document is referenced by:
DSCC-VID-V62/13603 REV A - MICROCIRCUIT, LINEAR, 2.5 V TO 3.3 V HIGH PERFORMANCE CLOCK BUFFER, MONOLITHIC SILICON
Published by DLA on June 14, 2018
This drawing documents the general requirements of a 2.5 V to 3.3 V high performance clock buffer microcircuit, with an operating temperature range of -55°C to +125°C.
This document is referenced by:
DSCC-VID-V62/12602 REV A - MICROCIRCUIT, DIGITAL, COMPOLETE DDR, DDR2 AND DDR3 MEMORY POWER SOLUTION SYNCHRONOUS BUCK CONTROLLER, 3 A LDO, BUFFERED REFERENCE, MONOLITHIC SILICON
Published by DLA on April 16, 2018
This drawing documents the general requirements of a high performance complete DDR, DDR2 and DDR3 memory power solution synchronous buck controller, 3-A LDO, buffered reference microcircuit, with an...
This document is referenced by:
DSCC-VID-V62/13602 REV A - MICROCIRCUIT, DIGITAL LINEAR, 16 BIT DUAL SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS, MONOLITHIC SILICON
Published by DLA on May 22, 2018
This drawing documents the general requirements of a high performance microcircuit, with an operating temperature range of -55°C to +125°C.
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