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JEDEC JESD 51-14

Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path

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Organization: JEDEC
Publication Date: 1 November 2010
Status: active
Page Count: 46
scope:

This document specifies a test method (referred to herein as "Transient Dual Interface Measurement") to determine the conductive thermal resistance "Junction-to-Case" RθJC (θJC) of semiconductor devices with a heat flow through a single path, i.e. semiconductor devices with a high conductive heat flow path from the die surface that is heated to a package case surface that can be cooled by contacting it to an external heat sink.

The thermal resistance measured using this document is RθJCx or θJCx, where x denotes the package case side, where the heat is extracted, usually top (x= top) or bottom (x= bot) side.

Document History

JEDEC JESD 51-14
November 1, 2010
Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path
This document specifies a test method (referred to herein as "Transient Dual Interface Measurement") to determine the conductive thermal resistance "Junction-to-Case" RθJC (θJC) of semiconductor...

References

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