DLA - DSCC-DWG-V62/19618
MICROCIRCUIT, LINEAR, GaAs, pHEMT, MMIC, 0.1 GHz to 6 GHz 1 W POWER AMPLIFIER, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 2 August 2019 |
| Status: | active |
| Page Count: | 13 |
scope:
Scope.
This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.1 GHz to 6 GHz, 1 W power amplifier microcircuit with an operating temperature range of -55°C to +105°C.
Document History
DSCC-DWG-V62/19618
August 2, 2019
MICROCIRCUIT, LINEAR, GaAs, pHEMT, MMIC, 0.1 GHz to 6 GHz 1 W POWER AMPLIFIER, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit...